相关论文: A simple drain current model for Schottky-barrier …

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…

Carbon nanotube (CNT) Josephson junctions in the open quantum dot limit exhibit superconducting switching currents which can be controlled with a gate electrode. Shapiro voltage steps can be observed under radiofrequency current…

Full Adder is one of the critical parts of logical and arithmetic units. So, presenting a low power full adder cell reduces the power consumption of the entire circuit. Also, using Nano-scale transistors, because of their unique…

We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies…

Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related solid-state electronics, the…

Spin-dependent coherent quantum transport through carbon nanotubes (CNT) is studied theoretically within a tight-binding model and the Green's function partitioning technique. End-contacted metal/nanotube/metal systems are modelled and next…

We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field-effect transistors. We find that unscreened charge on the nanotube at the contact-channel interface leads to…

Using the Landauer-Buttiker formalism, we calculate the effect of structural twist on electron transport in conducting carbon nanotubes. We demonstrate that even a localized region of twist scatters the propagating pi electrons and induces…

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive…

Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predominant effect of quantum capacitance in limiting or even…

Macroscopic assemblies of carbon nanotubes (CNTs) are desirable materials because of the excellent CNT properties. Amongst the methods of production of these CNT materials, the dry-draw fabrication where CNT fibers (CNTFs) are directly…

Here we address a theoretical study on the behaviour of electronic states of heterojunctions and quantum dots based on carbon nanotubes under magnetic fields. Emphasis is put on the analysis of the local density of states, the conductance,…

We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to…

We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky…

The search for earth abundant, efficient and stable electrocatalysts that can enable the chemical reduction of CO2 to value-added chemicals and fuels at an industrially relevant scale, is a high priority for the development of a global…

The assembly of aligned carbon nanotubes (CNT) into fibers (CNTF) is a convenient approach to exploit and apply the unique physico-chemical properties of CNTs in many fields. CNT functionalization has been extensively used for their…

We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…

We present an empirical model for the nearballistic transport in carbon nanotube (CNT) transistors used as strain sensors. This model describes the intrinsic effect of strain on the transport in CNTs by taking into account phonon scattering…

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices…

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs,…