Electrostatic effects on contacts to carbon nanotube transistors
Mesoscale and Nanoscale Physics
2014-03-18 v1
Abstract
We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field-effect transistors. We find that unscreened charge on the nanotube at the contact-channel interface leads to a potential barrier that can significantly hamper transport through the device. This effect is largest for intermediate gate voltages and for contacts near the ohmic-Schottky crossover, but can be mitigated with a reduction in the gate oxide thickness. These results help to elucidate the important role that contact geometry plays in the performance of carbon nanotube electronic devices.
Cite
@article{arxiv.1106.2186,
title = {Electrostatic effects on contacts to carbon nanotube transistors},
author = {Aron W. Cummings and François Léonard},
journal= {arXiv preprint arXiv:1106.2186},
year = {2014}
}