Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from temperature-dependent magnetoconductance measurements.
@article{arxiv.0705.1493,
title = {Magnetically Induced Field Effect in Carbon Nanotube Devices},
author = {Georgy Fedorov and Alexander Tselev and David Jimenez and Sylvain Latil and Nikolay G. Kalugin and Paola Barbara and Dmitry Smirnov and Stephane Roche},
journal= {arXiv preprint arXiv:0705.1493},
year = {2009}
}