Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.
@article{arxiv.cond-mat/0401591,
title = {High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates},
author = {B. M. Kim and T. Brintlinger and E. Cobas and Haimei Zheng and M. S. Fuhrer and Z. Yu and R. Droopad and J. Ramdani and K. Eisenbeiser},
journal= {arXiv preprint arXiv:cond-mat/0401591},
year = {2007}
}
Comments
13 pages, 1 table, 3 figures, to appear in Appl. Phys. Lett