High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition (CVD). Furthermore, the integration of hydrophobic self-assembled monolayers (SAMs) in the device structure eliminates the primary source of gating hysteresis in SWNT-FETs, which leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.
@article{arxiv.cond-mat/0605657,
title = {High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly},
author = {S. A. McGill and S. G. Rao and P. Manandhar and S. Hong and P. Xiong},
journal= {arXiv preprint arXiv:cond-mat/0605657},
year = {2009}
}