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相关论文: Modulation Doping near Mott-Insulator Heterojuncti…

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Inspired by the recent experimental advances in cold atom quantum simulators, we explore the experimentally implemented bosonic $t$-$t'$-$J$ model on the square lattice using large-scale density matrix renormalization group simulations. By…

强关联电子 · 物理学 2026-03-06 Xin Lu , Jia-Xin Zhang , Lukas Homeier , Shou-Shu Gong , D. N. Sheng , Zheng-Yu Weng

High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are…

Effects of inhomogeneous doping on the high-$T_c$ cuprate superconductors are studied within the framework of the t-J model. Especially, the boundary between two non-superconducting regions with doping rates much higher and lower than the…

强关联电子 · 物理学 2007-05-23 M. Hayashi , H. Ebisawa

The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the…

强关联电子 · 物理学 2018-08-15 Michael W. Swift , Zach Porter , Stephen D. Wilson , Chris G. Van de Walle

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…

强关联电子 · 物理学 2008-02-15 S. Pankov , V. Dobrosavljevic

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

Study and comparison of over 30 examples of electron doped BaFe2As2 for transition metal (TM) = Co, Ni, Cu, and (Co/Cu mixtures) have lead to an understanding that the suppression of the structural/antiferromagnetic phase transition to low…

超导电性 · 物理学 2009-08-04 P. C. Canfield , S. L. Bud'ko , N. Ni , J. Q. Yan , A. Kracher

We show that doping-induced charge fluctuations in strongly correlated Hubbard electron systems near the 1/2-filled, insulating limit cause overscreening of the electron-electron Coulomb repulsion. The resulting attractive screened…

超导电性 · 物理学 2007-05-23 H. -B. Schüttler , C. Gröber , H. G. Evertz , W. Hanke

Many emergent phenomena appear in doped Mott insulators near the insulator-to-metal transition. In high-temperature cuprate superconductors, superconductivity arises when antiferromagnetic (AFM) order is gradually suppressed by carrier…

We consider dilute magnetic doping in the surface of a three dimensional topological insulator where a two dimensional Dirac electron gas resides. We find that exchange coupling between magnetic atoms and the Dirac electrons has a strong…

介观与纳米尺度物理 · 物理学 2015-05-18 A. S. Núñez , J. Fernández-Rossier

The realization of a Mott insulating state in a system of ultracold fermions comprising far more internal components than the electron, provides an avenue for probing many-body physics that is difficult to access in solids.

量子气体 · 物理学 2012-12-11 Congjun Wu

A self-doping effect between outer and inner CuO$_2$ planes (OPs and IPs) in multi-layer cuprate superconductors is studied. When one considers a three-layer tight-binding model of the Hg-based three-layer cuprate derived from the first…

超导电性 · 物理学 2017-08-08 Kazutaka Nishiguchi , Shingo Teranishi , Koichi Kusakabe

This work explores the unique character of strongly correlated systems, specifically Mott-insulators, in the context of battery electrode materials. The study investigates the correlation between the proposed chemical potential evolution…

Within the Kotliar-Ruckenstein slave-boson approach, we have studied the antiferromagnetic (AF) properties for the $t$-$t'$-$t''$-$U$ model applied to electron-doped cuprate superconductors. Due to inclusion of spin fluctuations the AF…

强关联电子 · 物理学 2009-11-11 Qingshan Yuan , Feng Yuan , C. S. Ting

Doping change and distortion effect on the double-exchange ferromagnetism are studied within a simplified double-exchange model. The presence of distortion is modelled by introducing the Falicov-Kimball interaction between itinerant…

强关联电子 · 物理学 2007-05-23 Phan Van-Nham , Tran Minh-Tien

Traditionally one and two-point correlation functions are used to characterize many-body systems. In strongly correlated quantum materials, such as the doped 2D Fermi-Hubbard system, these may no longer be sufficient because higher-order…

量子气体 · 物理学 2021-01-20 A. Bohrdt , Y. Wang , J. Koepsell , M. Kánasz-Nagy , E. Demler , F. Grusdt

Conjugated polymers are increasingly used as organic mixed ionic-electronic conductors in electrochemical devices for neuromorphic computing, bioelectronics and energy harvesting. The design of efficient applications relies on high…

We study roles of electron correlations on topological insulators on the honeycomb lattice with the spin-orbit interaction. Accurate variational Monte Carlo calculations show that the increasing on-site Coulomb interactions cause a strong…

强关联电子 · 物理学 2011-05-24 Youhei Yamaji , Masatoshi Imada

Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…

超导电性 · 物理学 2019-01-31 R. Nourafkan , M. Côté , A. - M. S. Tremblay

Two-dimensional dilute magnetic semiconductors can provide fundamental insights in the very nature of magnetic orders and their manipulation through electron and hole doping. Despite the fundamental physics, due to the large charge density…

材料科学 · 物理学 2015-09-07 L. Seixas , A. Carvalho , A. H. Castro Neto
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