相关论文: Ge growth on ion-irradiated Si self-affine fractal…
Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution…
Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy…
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the…
We performed classical molecular dynamics simulations to investigate, from an atomistic point of view, the formation of dislocations during the epitaxial growth of Ge on Si. We show that simulations at 900 and 1000 K with deposition rates…
This paper reports the study of growth kinetics of ion beam sputtered aluminum thin films. Dynamic scaling theory was used to derive the kinetics from AFM measurements. AFM imaging revealed that surface incorporates distinctly different…
The initial stages of growth of Ge and Si on the Ge(001) surface are studied and compared to growth on the Si(001) surface. Metastable rows of diluted ad-dimers exist on both surfaces as intermediate stages of epitaxial growth.…
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly…
Al-induced layer exchange crystallization of amorphous Ge thin films has been demonstrated recently, and provides a suitable system to characterize, model and control Ge crystal growth on non-crystalline substrates. Direct observation of Ge…
A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 8 keV Ar$^{+}$ ions at various ion doses. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM), high resolution scanning electron…
We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over…
We investigate the kinetic roughening of Ar$^+$ ion-sputtered Pd(001) surface both experimentally and theoretically. \textit{In situ} real-time x-ray reflectivity and \textit{in situ} scanning tunneling microscopy show that nanoscale adatom…
We study the growth of the Fe films on GaAs(100) at a low temperature, 140 K, by $in$-$situ$ UHV x-ray reflectivity using synchrotron radiation. We find rough surface with the growth exponent, $\beta_S$ = 0.51$\pm$0.04. This indicates that…
Ni thin films grown by thermal evaporation and sputtering under different deposition conditions are characterized for structural and morphological properties using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. XRD…
Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic…
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and…
Growth and strain behavior of thin Ag films on Si substrate have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution x-ray diffraction studies. Ag islands formed on Si at…
200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energy were implanted into SiO2 matrix with Different fluences. The implanted samples were annealed at 950 C for 30 minutes in Ar ambience. Topographical studies of…
We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape…
In this article, fractal concepts were used to explore the thermally evaporated potassium bromide thin films of different thicknesses 200, 300, and 500 nm respectively; grown on aluminium substrates at room temperature. The self-affine or…
The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the…