相关论文: Novel High-Mobility Field-Effect Transistors Based…

We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…

Transition metal dichalcogenides have received much attention in the past decade not only due to the new fundamental physics, but also due to the emergent applications in these materials. Currently chalcogenide deficiencies in TMDs are…

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce…

Two-dimensional materials are considered for future quantum devices and are usually produced by extensive methods like molecular beam epitaxy. We report on the fabrication of field-effect transistors using individual ultra-thin lead sulfide…

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that…

We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…

Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in…

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties…

In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This…

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of…

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic…

Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting…

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible…

We demonstrate the field-effect transistor (FET) operation of molecularly-thin anatase phase produced through solid state transformation from Ti0.87O2 nanosheets. Monolayer Ti0.87O2 nanosheet with a thickness of 0.7 nm is two-dimensional…

Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the…

Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect…

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…