In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices, high-performance MOSFET and low-power TFET, for computational and power efficient system on chip (SoC) products. The calibrated 3D-TCAD simulation results validate characteristics and functionalities of the configurable FET, and showed good consistency with the static conventional MOSFET (or TFET).
@article{arxiv.1412.4975,
title = {A Dynamically Configurable Silicon Nanowire Field Effect Transistor based on Electrically Doped Source/Drain},
author = {Chitrakant Sahu and Avinash Lahgere and Jawar Singh},
journal= {arXiv preprint arXiv:1412.4975},
year = {2014}
}