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相关论文: Field-doping of C60 crystals: Polarization and Sta…

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The proposal of using the field-effect for doping organic crystals has raised enormous interest. To assess the feasibility of such an approach, we investigate the effect of a strong electric field on the electronic structure of C60…

材料科学 · 物理学 2007-05-23 Erik Koch , Olle Gunnarsson , Samuel Wehrli , Manfred Sigrist

We derive a model for the highest occupied molecular orbital band of a C60 crystal which includes on-site electron-electron interactions. The form of the interactions are based on the icosahedral symmetry of the C60 molecule together with a…

超导电性 · 物理学 2009-11-07 M. Granath , S. Ostlund

Band structures of C60-polymers are studied changing conjugation conditions and the electron number. We use a Su-Schrieffer-Heeger type semiempirical model. In the neutral C60-polymer, electronic structures change among direct-gap insulator…

凝聚态物理 · 物理学 2008-02-03 Kikuo Harigaya

For field-effect-doped fullerenes it was reported that the superconducting transition temperature Tc is markedly larger for C60.2CHX_3 (X=Cl, Br) crystals, than for pure C60. Initially this was explained by the expansion of the volume per…

超导电性 · 物理学 2009-11-07 Erik Koch , Olle Gunnarsson

Effects on C60 by thermal fluctuations of phonons, misalignment of molecules in a crystal, and other intercalated impurities are simulated by disorder potentials. The SSH model for doped C60 is solved with gaussian bond and site disorders.…

凝聚态物理 · 物理学 2007-05-23 Kikuo Harigaya

Effects on C$_{60}$ by thermal fluctuations of phonons, misalignment of C$_{60}$ molecules in a crystal, and other intercalated impurities (remaining C$_{70}$, oxygens, and so on) are simulated by disorder potentials. The…

凝聚态物理 · 物理学 2007-05-23 Kikuo Harigaya

In a recent paper (J.H. Schon, Ch. Kloc, R.C. Haddon and B. Batlogg, Nature 408 (2000) 549) a large increase in the superconducting critical temperature was observed in C60 doped with holes by application of a high electric field. We…

超导电性 · 物理学 2009-11-07 G. A. Ummarino , R. S. Gonnelli

The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the…

材料科学 · 物理学 2018-01-08 Mehmet Aras , Çetin Kılıç

We study the interplay between charge doping and intermolecular distance in the polymerization of C60 fullerene chains by means of density functional theory (DFT)-based first principle calculations. The potential energy surface analysis…

化学物理 · 物理学 2015-03-19 Roberta Poloni , Alfonso San Miguel , Maria Victoria Fernandez-Serra

We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schoen, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field…

超导电性 · 物理学 2009-11-07 Samuel Wehrli , Didier Poilblanc , T. M. Rice

Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-$k$ splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the…

材料科学 · 物理学 2017-06-07 Mehmet Aras , Sümeyra Güler-Kılıç , Çetin Kılıç

We have performed a scanning tunneling microscopy and spectroscopy study of potassium-doped C60 monolayers (KxC60) on Ag(001) in the regime of x ~ 1. Low temperature annealing (640 K) leads to the formation of two well-ordered KxC60 phases…

材料科学 · 物理学 2009-08-07 M. Grobis , R. Yamachika , A. Wachowiak , Xinghua Lu , M. F. Crommie

The calculations of the charge distribution in C$_{60}$-based FET structure are presented. A simple model is proposed to describe the distribution of the injected electrons or holes between two-dimensional layers. The calculations show that…

超导电性 · 物理学 2007-05-23 V. A. Kuprievich , O. L. Kapitanchuk , O. V. Shramko

In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon layer. This excess charge carrier concentration is called…

Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since…

One monolayer of C60 on one monolayer of hexagonal boron nitride on nickel is investigated by photoemission. Between 150 and 250 K the work function decreases and the binding energy of the highest occupied molecular orbital (HOMO) increases…

材料科学 · 物理学 2016-08-31 M. Muntwiler , W. Auwarter , A. P. Seitsonen , J. Osterwalder , T. Greber

Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent…

介观与纳米尺度物理 · 物理学 2023-01-18 Drew W. Latzke , Claudia Ojeda-Aristizabal , Jonathan D. Denlinger , Ryan Reno , Alex Zettl , Alessandra Lanzara

The evolution of electronic (spin and charge) excitations upon carrier doping is an extremely important issue in superconducting layered cuprates and the knowledge of its asymmetry between electron- and hole-dopings is still fragmentary.…

Variations in the band structures of C60-polymers are studied, when conjugation conditions and the electron number are changed. We use a semiempirical model with the Su-Schrieffer-Heeger type electron-phonon interactions. In the neutral…

材料科学 · 物理学 2016-08-31 Kikuo Harigaya

Recent experiments have shown that C60 can be positively field-doped. In that state, fullerene exhibits a higher resistivity and a higher superconducting temperature than the corresponding negatively doped state. A strong intramolecular…

超导电性 · 物理学 2009-11-07 Nicola Manini , Andrea Dal Corso , Michele Fabrizio , Erio Tosatti
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