相关论文: Single-electron tunneling in InP nanowires

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control,…

We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative…

We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…

The electronic structures of zig-zag and arm-chair single-walled carbon nanotubes interacting with a transitional-metal atomic nanowire of Ni have been determined. The Ni nanowire creates a large electron density of states (DOS)at the Fermi…

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP…

Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…

We report on the fabrication and current-voltage (IV) characteristics of very narrow, strip-like arrays of metal nanoparticles. The arrays were formed from gold nanocrystals self-assembled between in-plane electrodes. Local cross-linking of…

The charge transport properties of single superconducting tin nanowires, encapsulated by multiwalled carbon nanotubes have been investigated by multi-probe measurements. The multiwalled carbon nanotube protects the tin nanowire from…

We report on the experimental study of electron transport in sub-micron-wide ''wires'' fabricated from Si $\delta $-doped GaAs. These quasi-one-dimensional (Q1D) conductors demonstrate the crossover from weak to strong localization with…

We investigate tunneling through a short interacting wire. We identify two temperature regimes (a) $T_{Kondo}<T\le T^{wire}=\hbar v_F/k_Bd$ ($d$ is the length of the short wire) and (b) $T<T_{Kondo}\ll T^{wire}$. In the first regime the…

The conductance through a semi-infinite one-dimensional wire, partly embedded in a superconducting bulk electrode, is studied. When the electron-electron interactions within the wire are strongly repulsive, the wire effectively decouples…

We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal…

We investigate transport in weakly-coupled metal nanoparticle arrays, focusing on the regime where tunneling is competing with strong single electron charging effects. This competition gives rise to an interplay between two types of charge…

We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for…

Niobium thin film wires were fabricated using electron beam lithography with a four layer liftoff mask system, and subsequently thinned by anodisation. The resistance along the wire was monitored in situ and trimmed by controlling the…

Motivated by recent tunneling experiments in the parallel wire geometry, we calculate results for momentum resolved tunneling into a short one-dimensional wire, containing a small number of electrons. We derive some general theorems about…

In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…

In the recent work of Ref.\cite{Vlaic2017-bs}, it has been shown that Pb nanocrystals grown on the electron accumulation layer at the (110) surface of InAs are in the regime of Coulomb blockade. This enabled the first scanning tunneling…

Using cryogenic scanning tunnelling microscopy and scanning tunnelling spectroscopy we measured single electron tunnelling of isolated Au nanoparticles with 1.4 nm in radius. We observe that a gap {\Delta}V ~ 2e/C (C is the capacitance of…