相关论文: Single-electron tunneling in InP nanowires
We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap…
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the…
We describe the production and characterization of microelectromagnets made for trapping and manipulating atomic ensembles. The devices consist of 7 fabricated parallel copper conductors 3 micrometer thick, 25mm long, with widths ranging…
We report on the fabrication and measurements of platinum-self-aligned nanogap devices containing cubed iron (core)/iron oxide (shell) nanoparticles (NPs) with two average different sizes (13 and 17 nm). The nanoparticles are deposited by…
Segmented magnetic nanowires are a promising route for the development of three dimensional data storage techniques. Such devices require a control of the coercive field and the coupling mechanisms between individual magnetic elements. In…
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…
We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At…
We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-{\kappa} gate dielectrics. The top-gated monolayer…
Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4x1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a…
A simple and robust electrode insulation technique that can withstand a voltage as high as $\mathrm{1000~V}$, which is equivalent to an electric field strength of $\sim 1MV/m$ across a $\mathrm{10~\mu m}$ channel filled with an electrolyte…
The fabrication of metallic single-walled carbon nanotube electrodes separated by gaps of typically 20nm width by electron-beam-induced oxidation is studied within an active device configuration. The tube conductance is measured…
We have measured the electrical properties of individual bundles, or "ropes" of single-walled carbon nanotubes. Below ~10 K, the low bias conductance is suppressed for voltages below a few millivolts. In addition, dramatic peaks are…
We report the detection of quantum confinement in single InAs-InP core-shell nanowires. The wires having an InAs core with ~25 nm diameter are characterized by emission spectra in which two peaks are identified under high excitation…
We propose the model of a manifold of one-dimensional interacting electron systems to account for the superconductivity observed in ropes of nanotubes. We rely on the strong suppression of single-particle hopping between neighboring…
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires…
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…
Interactions in one-dimensional (1D) electron systems are expected to cause a dynamical separation of electronic spin and charge degrees of freedom. A promising system for experimental observation of this non-Fermi-liquid effect consists of…
Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si…
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…
We report on the electric measurements of an individual Au nanoparticle with an ultra-high contact resistance of about $10^{19} \Omega$. The high-impedance measurements have been carried out by counting the electrons that are transferred…