We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trapping. These results suggest that oxide removal from the nanowire surface, with proper passivation to prevent regrowth, should lead to the reduction or elimination of random telegraph noise, an important obstacle for sensitive experiments at the single electron level.
@article{arxiv.1209.3237,
title = {Trapped charge dynamics in InAs nanowires},
author = {Gregory W. Holloway and Yipu Song and Chris M. Haapamaki and Ray R. LaPierre and Jonathan Baugh},
journal= {arXiv preprint arXiv:1209.3237},
year = {2013}
}
Comments
12 pages, 4 figures. New version includes a slightly modified charge trap model and minor corrections