相关论文: Ballistic Spin Injection from Fe(001) into ZnSe an…

Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable…

Electronic properties like current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom present in quantum particles. The spin Hall effects (SHEs), first proposed 40 years ago, are an unusual…

We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces.…

We have investigated the initial growth of Fe on GaAs(110) by means of density functional theory. In contrast to the conventionally used (001)-surface the (110)-surface does not reconstruct. Therefore, a flat interface and small diffusion…

Elucidating the relationship between spin excitations and fermiology is essential for clarifying the pairing mechanism in iron-based superconductors (FeSCs). Here, we report inelastic neutron scattering results on the hole overdoped…

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…

Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC…

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the…

Landauer's formula relates the conductance of a quantum wire or interface to transmission probabilities. Total transmission probabilities are frequently calculated using Green function techniques and an expression first derived by Caroli.…

Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…

The Landauer-Buettiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin…

We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was…

We report on a precision measurement of the neutron spin structure function $g^n_1$ using deep inelastic scattering of polarized electrons by polarized ^3He. For the kinematic range 0.014<x<0.7 and 1 (GeV/c)^2< Q^2< 17 (GeV/c)^2, we obtain…

We report on a way to manipulate the spin transport through double-stranded DNA contacted by normal-metal electrodes. On the basis of an effective model Hamiltonian, the conductance and the spin polarization are calculated in the presence…

The helical spin texture on the surface of topological crystalline insulators (TCI) makes these materials attractive for application in spintronics. In this work, spin-polarization and electronic structure of surface states of…

We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…

Linear and non-linear transport properties through an atomic-size point contact based on oxides two-dimensional electron gas is examined using the tight-binding method and the $\mathbf{k\cdot p}$ approach. The ballistic transport is…

We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band…

The understanding of orbital hybridization and spin-polarization at the organic-ferromagnetic interface is essential in the search for efficient hybrid spintronic devices. Here, using first-principles calculations, we report a systematic…