Spin injection in spin FETs using a step-doping profile
介观与纳米尺度物理
2009-11-10 v2
摘要
We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.
引用
@article{arxiv.cond-mat/0405591,
title = {Spin injection in spin FETs using a step-doping profile},
author = {Min Shen and Semion Saikin and Ming-Cheng Cheng},
journal= {arXiv preprint arXiv:cond-mat/0405591},
year = {2009}
}
备注
5 pages, 8 figures. This paper is based on the work presented at the 2004 IEEE NTC Quantum Device Technology Workshop (Clarkson Unviersity, Potsdam, NY, May 17-21, 2004), IEEE Transactions on Nanotechnology, accepted for publication