Spin extraction from a non-magnetic semiconductor
材料科学
2007-05-23 v2 介观与纳米尺度物理
摘要
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM) through a Schottky barrier modified with very thin heavily doped interfacial layer. We show that electrons with a certain spin projection are extracted from S, while electrons with the opposite spins are accumulated in S. The spin density increases and spin penetration depth decreases with current.
引用
@article{arxiv.cond-mat/0307656,
title = {Spin extraction from a non-magnetic semiconductor},
author = {A. M. Bratkovsky and V. V. Osipov},
journal= {arXiv preprint arXiv:cond-mat/0307656},
year = {2007}
}
备注
4 pages, 2 figures