Electric-field dependent spin diffusion and spin injection into semiconductors
Materials Science
2009-11-07 v1
Abstract
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.
Cite
@article{arxiv.cond-mat/0201425,
title = {Electric-field dependent spin diffusion and spin injection into semiconductors},
author = {Z. G. Yu and M. E. Flatte},
journal= {arXiv preprint arXiv:cond-mat/0201425},
year = {2009}
}
Comments
5 pages, 3 eps figures