相关论文: Vertical transport and electroluminescence in InAs…

We study the dc conductance and current fluctuations in diffusive voltage biased SNS junctions with a tunnel barrier inside the mesoscopic normal region. We find that at subgap voltages, eV<2Delta/n, the current associated with the chain of…

We report on the vertical electron mobility versus temperature by applying the interface roughness scattering and ionized impurity scattering in InAs/GaSb superlattices. Using the Finite difference K.P method, we calculated the band…

Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…

We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe$_2$ barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling…

We report on the fabrication of highly transparent superconductor/normal metal/two-dimensional electron gas junctions formed by a superconducting NbN electrode, a thin (10nm) Au interlayer, and a two-dimensional electron gas in a InGaAs/InP…

Phase-coherent diffusive transport through mesoscopic hybrid superconductor/normal metal tunneling structures is investigated. For a N-s-S two-barrier tunneling system with bulk S and N electrodes coupled by a mesoscopic superconducting…

Electron transport and quantum conductance through an armchair graphene and its oxidized graphene- containing form were investigated by the density functional theory (DFT) method and the implementation of the non-equilibrium Green function…

We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through…

We present the concept and the results of pilot measurements of tunneling in a system {Al/$\delta_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$\delta$-GaAs}…

We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been…

Cotunneling current through a resonant level coupled to either normal and superconducting or to two superconducting leads is studied for the domain of bias voltages, V, exceeding the superconducting gap, 2\Delta. Due to the on-site…

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice…

Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain…

We report strong light emission from a room-temperature n-type unipolar-doped In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very…

Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and…

Vertically stacked two-dimensional (2D) van der Waals (vdW) heterostructures based on graphene electrodes represent a promising architecture for next-generation electronic devices. However, their first-principles characterizations have been…

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures…

We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage…

We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies…

We report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (mu=20x10^6 cm^2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAs Hall bar…