相关论文: SiNx RRAMs performance with different stoichiometr…
The structure, composition and electrophysical characteristics of low-temperature silicon dioxide films under influence of various technology factors, such as ion implantation, laser irradiation, thermal and photonic annealing, have been…
Nanocrystalline superconducting films offer an excellent platform to explore the interplay between disorder, granularity, and dimensionality. In this work, we investigate two series of NbxSn thin films with near-stoichiometric (x =3) and…
The electronic structure change of NiS$_{2-x}$Se$_x$ as a function of Se concentration $x$ has been studied by Ni $L$-edge X-ray absorption spectroscopy (XAS). The XAS spectra show distinct features in Ni $L_3$ edge, indicating whether the…
The steady state photoconductivity as a function of temperature and light intensity was measured on plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films possessing different thicknesses and…
This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline…
Some ternary TM nitrides are predicted to adopt layered structures that make them interesting for thermoelectric conversion and quantum materials applications. Synthesis of TM ternary nitride films by physical vapor deposition often favors…
Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress induced changes of resistivity. At room temperature these…
High hardness and toughness are generally considered mutually exclusive properties for single-crystal ceramics. Combining experiments and ab initio molecular dynamics (AIMD) atomistic simulations at room temperature, we demonstrate that…
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film…
High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…
Low-frequency resistance fluctuations cause excess noise in biased resistors. The magnitude of these fluctuations varies significantly between different resistor types. In this work measurements of excess noise in precision thin film and…
Micron scale silicon nitride (SiN_x) microdisk optical resonators are demonstrated with Q = 3.6 x 10^6 and an effective mode volume of 15 (\lambda / n)^3 at near visible wavelengths. A hydrofluoric acid wet etch provides sensitive tuning of…
We study high-stress SiN films for reaching the quantum regime with mesoscopic oscillators connected to a room-temperature thermal bath, for which there are stringent requirements on the oscillators' quality factors and frequencies. Our SiN…
X-ray Photoelectron Spectroscopy (XPS) is generally used for chemical analysis of surfaces and interfaces. This method involves the analysis of changes in binding energies and peak shapes of elements under consideration. It is also possible…
At vertical edges, thin films of silicon oxide (SiO_{2-x}) contain semiconductive c-Si layered nanocrystals (Si NC) embedded in and supported by an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables…
Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate…
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the…
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive…
Sputter thin film deposition after photolithography often produces unwanted spikes along the side edges. These spikes are a significant issue for the development of magnetic tunnel junction (MTJ)-based memory and molecular spintronics…