Substrate effect on the resistive switching in BiFeO3 thin films

Yao Shuai; Xin Ou; Chuangui Wu; Wanli Zhang; Shengqiang Zhou; Danilo Buerger; Helfried Reuther; Stefan Slesazeck; Thomas Mikolajick; Manfred Helm; Heidemarie Schmidt

doi:10.1063/1.3672840

Substrate effect on the resistive switching in BiFeO3 thin films

Materials Science 2012-09-27 v1

Authors: Yao Shuai , Xin Ou , Chuangui Wu , Wanli Zhang , Shengqiang Zhou , Danilo Buerger , Helfried Reuther , Stefan Slesazeck , Thomas Mikolajick , Manfred Helm , Heidemarie Schmidt

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Abstract

BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.

Keywords

thin films thin film physics epitaxial thin films

Cite

@article{arxiv.1209.5868,
  title  = {Substrate effect on the resistive switching in BiFeO3 thin films},
  author = {Yao Shuai and Xin Ou and Chuangui Wu and Wanli Zhang and Shengqiang Zhou and Danilo Buerger and Helfried Reuther and Stefan Slesazeck and Thomas Mikolajick and Manfred Helm and Heidemarie Schmidt},
  journal= {arXiv preprint arXiv:1209.5868},
  year   = {2012}
}

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11 pages, 3 figures

Substrate effect on the resistive switching in BiFeO3 thin films

Abstract

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