相关论文: Simulation of current-driven magnetisation switchi…

The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure,…

Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…

Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…

Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…

This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…

We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…

We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis…

Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error…

Binary stochastic neurons (BSN's) form an integral part of many machine learning algorithms, motivating the development of hardware accelerators for this complex function. It has been recognized that hardware BSN's can be implemented using…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy…

STT-MRAM with interfacial-anisotropy-type perpendicular MTJ (IPMTJ) is a powerful candidate for the low switching energy design of STT-MRAM. In the literature, the reading operation of STT-MRAM structured with IPMTJs have been not studied…

A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…

This work presents a three-dimensional constitutive model for the martensitic transformation in polycrystalline Shape Memory Alloys (SMAs) under large deformation. By utilizing the logarithmic strain and rate, the model is able to account…

In the search for rare-earth free permanent magnets, various ideas related to shape anisotropy are being pursued. In this work we assess the limits of shape contributions to the reversal stability using micromagnetic simulations. In a first…

In this paper, we employ micromagnetic simulations to study non-adiabatic stochastic resonance (NASR) excited by spin-transfer torque in a super-paramagnetic free layer nanomagnet of a nanoscale spin valve. We find that NASR dynamics…

Modulation of stress anisotropy of magnetostrictive nanomagnets with strain offers an extremely energy-efficient method of magnetization reversal. The reversal process, however, is often incoherent and hence error-prone in the presence of…

We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible…

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…