相关论文: Simulation of current-driven magnetisation switchi…
Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent…
Arrays of coupled nanomagnets have wide-ranging fundamental and practical applications in artificial spin ices, neuromorphic computing and spintronics. However, lacking in these fields are nanomagnets with perpendicular magnetic anisotropy…
We have constructed an analytic formula to treat the perpendicular magnetic anisotropy energy in ferromagnetic metals with low symmetry, such as C4V and C3V. We find that the anisotropy energy is proportional to a part of the expectation…
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA)…
While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…
Ultra-fast magnetization switching triggered by a single femtosecond laser pulse has gained significant attention over the last decade for its potential in low-power consumption, high-speed memory applications. However, this phenomenon has…
In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic…
Persistent spin textures (PST) are special spin configurations in spin-orbit-coupled systems in which the spin polarization acquires a symmetry-enforced momentum-independent orientation, leading to exceptionally long spin lifetimes and…
Three-dimensional (3D) antiferromagnets with random magnetic anisotropy (RMA) experimentally studied to date do not have random single-ion anisotropies, but rather have competing two-dimensional and three-dimensional exchange interactions…
We have observed peculiar magnetization textures in Ni$_{80}$Pd$_{20}$ nanostructures using three different imaging techniques: magnetic force microscopy, photoemission electron microscopy under polarized X-ray absorption, and scanning…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
Spin-transfer torques (STT), Gilbert damping (GD), and effective spin renormalization (ESR) are investigated microscopically in a 2D Rashba ferromagnet with spin-independent Gaussian white-noise disorder. Rashba spin-orbit coupling induced…
We systematically investigate the perpendicular magnetocrystalline anisotropy (MCA) in Co$-$Pt/Pd-based multilayers. Our magnetic measurement data shows that the asymmetric Co/Pd/Pt multilayer has a significantly larger perpendicular…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
Spin transfer torque from spin-polarized electrical current can excite large-amplitude magnetization dynamics in metallic ferromagnets of nanoscale dimensions. Since magnetic anisotropy energies of nanomagnets are comparable to the thermal…
Stochastic micromagnetic simulations are employed to study switching in three-dimensional magnetic nanopillars exposed to highly misaligned fields. The switching appears to proceed through two different decay modes, characterized by very…
Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding…
We performed two-dimensional simulated tempering (ST) simulations of the two-dimensional Ising model with different lattice sizes in order to investigate the two-dimensional ST's applicability to dealing with phase transitions and to study…
We experimentally study the dynamical modes excited by current-induced spin-orbit torque and its electrostatic gating effect in a 3-terminal planar nano-gap spin Hall nano-oscillator (SHNO) with a moderate interfacial perpendicular magnetic…