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相关论文: Material transfer and contact optimization in MoS2…

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In search of an improved strategy to form low resistance contacts to MoS2 and related semiconducting transition metal dichalcogenides, we use ab initio density functional electronic structure calculations in order to determine the…

介观与纳米尺度物理 · 物理学 2019-05-03 Zhibin Gao , Zhixian Zhou , David Tomanek

Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent…

介观与纳米尺度物理 · 物理学 2023-09-18 Sameer Kumar Mallik , Roshan Padhan , Suman Roy , Mousam Charan Sahu , Sandhyarani Sahoo , Satyaprakash Sahoo

In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer…

介观与纳米尺度物理 · 物理学 2019-12-11 Aron Szabo , Achint Jain , Markus Parzefall , Lukas Novotny , Mathieu Luisier

MoS2 and WS2 layered transition-metal dichalcogenides are indirect band gap semiconductors in their bulk forms. Thinned to a monolayer, they undergo a transition and become direct band gap materials. Layered structures of that kind can be…

材料科学 · 物理学 2013-02-15 Nourdine Zibouche , Agnieszka Kuc , Thomas Heine

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many…

材料科学 · 物理学 2014-01-21 Yongqing Cai , Zhaoqiang Bai , Hui Pan , Yuan Ping Feng , Boris I. Yakobson , Yong-Wei Zhang

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with…

Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMD) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for…

材料科学 · 物理学 2014-10-31 Yuchen Du , Lingming Yang , Han Liu , Peide D. Ye

Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials,…

材料科学 · 物理学 2021-09-16 Merve Acar , Emre Gur

Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the…

The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing…

Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical…

材料科学 · 物理学 2017-01-10 Zhihao Yu , Zhun-Yong Ong , Songlin Li , Jian-Bin Xu , Gang Zhang , Yong-Wei Zhang , Yi Shi , Xinran Wang

The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface…

介观与纳米尺度物理 · 物理学 2024-08-09 Riku Tataka , Alka Sharma , Tomoya Johmen , Takeshi Kumasaka , Motoya Shinozaki , Yong P. Chen , Tomohiro Otsuka

Semiconducting transition metal dichalcogenides (TMDCs) present new possibilities for designing novel electronic devices. An efficient contacting scheme is required to take advantage of exceptional opto-electronic properties of TMDCs in…

Transition metal dichalcogenides such as MoS$_2$ represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS$_2$ (v-MoS$_2$) nanosheets could be advantageous as…

For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal workfunction. Although the on-state…

介观与纳米尺度物理 · 物理学 2015-06-17 Vasili Perebeinos , Jerry Tersoff , Wilfried Haensch

Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical, excitonic, mechanical, and electronic properties. Nanostructured multilayer TMDs were recently shown to be highly promising for…

The two-dimensional (2D) layered semiconductors such as MoS2 have attracted tremendous interest as a new class of electronic materials. However, there is considerable challenge in making reliable contacts to these atomically thin materials.…

This article explores the recent advancements in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) and their potential applications in various fields, including nanoelectronics, photonics, sensing, energy storage,…

材料科学 · 物理学 2025-09-17 Mitesh B. Solanki , Margi Jani
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