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Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of…

材料科学 · 物理学 2007-05-23 Franz Kreupl , Andrew P. Graham , Maik Liebau , Georg S. Duesberg , Robert Seidel , Eugen Unger

Two-dimensional (2D) superconductivity is a fascinating phenomenon packed with rich physics and wide technological application. The vortices and their dynamics arising from classical and quantum fluctuations give rise to…

介观与纳米尺度物理 · 物理学 2018-12-17 Chithra H. Sharma , Ananthu P. Surendran , Sangeeth S. Varma , Madhu Thalakulam

The discovery of two-dimensional transition metal dichalcogenides (2D TMDs) has promised next-generation photonics and optoelectronics applications, particularly in the realm of nanophotonics. Arguably, the most crucial fundamental…

Transition metal dichalcogenides (TMDs) are layered materials which show excellent potential for nanoelectronic and optoelectronic applications. However, as many of the exciting features of these materials are controlled by the anharmonic…

材料科学 · 物理学 2021-08-13 Suvodeep Paul , Saheb Karak , Annie Mathew , Ankita Ram , Surajit Saha

Transition metals dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large mono-crystals of these systems are…

Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing…

介观与纳米尺度物理 · 物理学 2024-05-28 Sudipta Majumder , Vaibhav Walve , Rahul Chand , Gokul M. A. , Sooyeon Hwang , G. V. Pavan Kumar , Aparna Deshpande , Atikur Rahman

Two-dimensional transition metal dichalcogenides represent an emerging class of materials exhibiting various intriguing properties, and integration of such materials for potential device applications will necessarily encounter creation of…

材料科学 · 物理学 2016-02-25 Ping Cui , Jin-Ho Choi , Wei Chen , Jiang Zeng , Chendong Zhang , Chih-Kang Shih , Zhenyu Li , Zhenyu Zhang

Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated…

介观与纳米尺度物理 · 物理学 2023-06-28 Shihao Ju , Binxi Liang , Jian Zhou , Danfeng Pan , Yi Shi , Songlin Li

Ultrathin two-dimensional semiconductors obtained from layered transition-metal dichalcogenides such as molybdenum disulfide (MoS2) are promising for ultimately scaled transistors beyond Si. Although the shortening of the semiconductor…

材料科学 · 物理学 2016-08-15 Ryo Nouchi

Carrier injection into carbon nanotubes and graphene nanoribbons, contacted by a metal coating over an arbitrary length, is studied by various means: Minimal models allow for exact analytic solutions which can be transferred to the original…

介观与纳米尺度物理 · 物理学 2008-04-30 Norbert Nemec , David Tomanek , Gianaurelio Cuniberti

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with tantalizing layer-dependent electronic and optical properties have emerged as a new paradigm for integrated flat opto-electronic devices. However, daunting challenges remain…

光学 · 物理学 2021-02-23 Dejiao Hu , Hao Li , Yupeng Zhu , Yuqiu Lei , Jiajin Zheng , Yaoyu Cao , Bai-Ou Guan , Lei Bi , Xiangping Li

Transition metal dichalcogenides (TMDs) are regarded as a possible materials platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any…

Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…

材料科学 · 物理学 2016-02-16 Yao Li , Karel-Alexander N. Duerloo , Kerry Wauson , Evan J. Reed

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…

Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent…

材料科学 · 物理学 2015-06-18 Liangzhi Kou , Aijun Du , Changfeng Chen , Thomas Frauenheim

We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between…

材料科学 · 物理学 2016-02-03 M. Farmanbar , G. Brocks

Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating…

We performed high-throughput density functional theory calculations of optical matrix elements between band edges across a diverse set of non-magnetic two-dimensional monolayers with direct band gaps. Materials were ranked as potential…

材料科学 · 物理学 2025-08-15 A. F. Gómez-Bastidas , Karthik Sriram , A. C. Garcia-Castro , Oleg Rubel

How to transfer MoS2 films from growth substrates onto target substrates is a critical issue for its practical applications. However, it remains a great challenge to avoid the sample degradation and substrate destruction, since current…

Transition metal dichalcogenides are investigated for various applications at the nanoscale thanks to their unique combination of properties and dimensionality. For many of the anticipated applications, heat conduction plays an important…

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