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相关论文: Material transfer and contact optimization in MoS2…

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Low-dimensional metallic transport is at the heart of modern high-performance transistors. While the best devices are currently based on III-V heterojunction quantum-well channels, we demonstrate that much greater performance gains reside…

材料科学 · 物理学 2007-05-23 F. Green , D. Neilson

The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures of two-dimensional (2D) transition metal dichalco-genide…

介观与纳米尺度物理 · 物理学 2015-05-28 Leitao Liu , S. Bala Kumar , Yijian Ouyang , Jing Guo

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a…

介观与纳米尺度物理 · 物理学 2015-07-03 Hongxia Zhong , Zeyuan Ni , Yangyang Wang , Meng Ye , Zhigang Song , Yuanyuan Pan , Ruge Quhe , Jinbo Yang , Li Yang , Junjie Shi , Jing Lu

The discovery of graphene has ignited intensive investigation on two dimensional (2D) materials. Among them, transition metal dichalcogenide (TMDC), a typical representative, attracts much attention due to the excellent performance in field…

介观与纳米尺度物理 · 物理学 2016-04-19 Yangwei Zhang , Honglie Ning , Yanan Li , Yanzhao Liu , Jian Wang

Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce surface contamination to 2D materials, leading to poor electrical contacts…

材料科学 · 物理学 2024-11-05 Yumeng Liu , Yizhuo Wang , Zhengfang Fan , Jianyong Wei , Shuwen Guo , Zhijuan Su , Yaping Dan

We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…

One of the biggest challenges in implementation of Quantum circuits or Photonic Integrated Circuits in general is the inability to create efficient relay devices due to small decoherence time, high delays and poor interconnections that…

应用物理 · 物理学 2017-09-20 Anshika Upadhyay

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…

Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as…

Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted significant attention because of its outstanding properties, suitable for application in several critical technologies like, solar cells, photocatalysis, lithium-ion batteries,…

We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process,…

介观与纳米尺度物理 · 物理学 2014-12-30 Wei Sun Leong , Xin Luo , Yida Li , Khoong Hong Khoo , Su Ying Quek , John T. L. Thong

Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of…

介观与纳米尺度物理 · 物理学 2014-07-09 S. Yuan , R. Roldán , M. I. Katsnelson , F. Guinea

Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have…

材料科学 · 物理学 2016-07-15 Mervin Zhao , Yu Ye , Yimo Han , Yang Xia , Hanyu Zhu , Yuan Wang , David A. Muller , Xiang Zhang

Modifying phonon thermal conductivity in nanomaterials is important not only for fundamental research but also for practical applications. However, the experiments on tailoring the thermal conductivity in nanoscale, especially in…

In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs…

材料科学 · 物理学 2013-03-05 Han Liu , Adam T. Neal , Peide D. Ye

Transition metal dichalcogenide (TMD) bilayers have recently emerged as a robust and tunable moir\'e system for studying and designing correlated electron physics. In this work, by combining large-scale first principle calculation and…

强关联电子 · 物理学 2020-12-30 Yang Zhang , Noah F. Q. Yuan , Liang Fu

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently been shown to demonstrate non-volatile resistive switching (NVRS), offering significant advantages such as high-density integration and low energy consumption due to…

材料科学 · 物理学 2025-07-29 Brian H. Lee , Jameela Fatheema , Deji Akinwande , Wennie Wang

Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on…

The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…

The full geometrical symmetry groups (the line groups) of the monolayered, 2Hb and 3R polytypes of the inorganic MoS2 and WS2 micro- and nanotubes of arbitrary chirality are found. This is used to find the coordinates of the representative…

软凝聚态物质 · 物理学 2009-10-31 I. Milosevic , T. Vukovic , M. Damnjanovic , B. Nikolic