相关论文: Probing switchable valley-related Hall effects in …
The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized…
Altermagnetism exhibits advantages over both ferromagnetic and antiferromagnetic counterparts by enabling spin splitting within antiferromagnetic materials. Currently, it is established that valley polarization in altermagnetism remains…
Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X$\neq$Y=Cl, Br and I) monolayers are predicted to be in-plane…
Hall effect of topological quantum materials often reveals essential new physics and possesses potential for application. Magnetic Weyl semimetal is one especially interesting example that hosts an interplay between the spontaneous…
Realizing effective manipulation and explicit identification of topological spin textures are two crucial ingredients to make them as information carrier in spintronic devices with high storage density, high data handling speed and low…
Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton…
The Heusler compound Co2MnGa is a topological semimetal with intriguing electronic and magnetic properties, making it a promising candidate for spintronic applications. This study systematically investigates the effects of substrate…
We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous…
To date only a few two-dimensional (2D) magnetic crystals were experimentally confirmed, such as CrI3 and CrGeTe3, all with very low Curie temperatures (TC). High-throughput first-principles screening over a large set of materials yields 89…
While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…
We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the N\'eel…
The heavy fermion systems present a unique platform in which strong electronic correlations give rise to a host of novel, and often competing, electronic and magnetic ground states. Amongst a number of potential experimental tools at our…
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
In ferromagnets, electric current generally induces transverse Hall voltage in proportion to magnetization (anomalous Hall effect), and it is frequently used for electrical readout of the up and down spin states. While these properties are…
As an emerging magnetic phase, altermagnets with compensated magnetic order and non-relativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley…
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of…
Recent advances in condensed matter physics have shown that the valley degree of freedom of electrons in 2D materials with hexagonal symmetry, such as graphene, h-BN, and TMDs, can be efficiently exploited, leading to the emergent field of…
The intrinsic anomalous Hall conductivity (AHC) in a ferromagnetic metal is completely determined by its band structure. Since the spin orientation direction is an important band-structure tuning parameter, it is highly desirable to study…
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution…
The electric Hall effect (EHE) is a newly identified Hall effect characterized by a perpendicular electric field inducing a transverse charge current in two-dimensional (2D) systems. Here, we propose a spin and valley version of EHE. We…