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相关论文: Probing switchable valley-related Hall effects in …

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Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two novel altermagnetic…

材料科学 · 物理学 2024-11-12 Weifeng Xie , Xiong Xu , Yunliang Yue , Huayan Xia , Hui Wang

The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. We unveil topological phase transitions in the photonic spin Hall…

介观与纳米尺度物理 · 物理学 2017-10-11 W. J. M. Kort-Kamp

Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the…

The electronic correlation may have essential influence on electronic structures in some materials with special structure and localized orbital distribution. In this work, taking Janus monolayer FeClF as a concrete example, the correlation…

材料科学 · 物理学 2022-04-06 San-Dong Guo , Jing-Xin Zhu , Meng-Yuan Yin , Bang-Gui Liu

We predict the emergence and quantization of the valley Hall current of indirect excitons residing in noncentrosymmetric two-dimensional materials in the absence of an external magnetic field. Thus we report on the quantum anomalous valley…

介观与纳米尺度物理 · 物理学 2019-10-02 V. M. Kovalev , I. G. Savenko

The spontaneous Hall effect, corresponding to a zero-field anomalous Hall effect (AHE), is induced by symmetry breaking associated with ferromagnetism. Studies in recent years, however, have revealed that antiferromagnetic (AFM) states…

Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous…

材料科学 · 物理学 2022-05-31 Jakub Železný , Yuta Yahagi , Carlés-Gomez Ollivella , Yang Zhang , Yan Sun

Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based…

材料科学 · 物理学 2022-05-27 Yusheng Hou , Feng Xue , Liang Qiu , Zhe Wang , Ruqian Wu

We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…

介观与纳米尺度物理 · 物理学 2025-02-20 W. Zeng

In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as 'valley'. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled…

介观与纳米尺度物理 · 物理学 2019-06-12 Xian-Peng Zhang , Chunli Huang , Miguel A. Cazalilla

We study the electronic structures and topological properties of $(M+N)$-layer twisted graphene systems. We consider the generic situation that $N$-layer graphene is placed on top of the other $M$-layer graphene, and is twisted with respect…

介观与纳米尺度物理 · 物理学 2019-08-14 Jianpeng Liu , Zhen Ma , Jinhua Gao , Xi Dai

In Weyl semimetals the application of parallel electric and magnetic fields leads to valley polarization -- an occupation disbalance of valleys of opposite chirality -- a direct consequence of the chiral anomaly. In this work, we present…

介观与纳米尺度物理 · 物理学 2021-09-02 Pablo M. Perez-Piskunow , Nicandro Bovenzi , Anton R. Akhmerov , Maxim Breitkreiz

We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel…

介观与纳米尺度物理 · 物理学 2012-09-14 A. Vedyayev , N. Ryzhanova , N. Strelkov , B. Dieny

We present a unified theory of charge carrier transport in 2D Dirac systems with broken mirror inversion and time-reversal symmetries (e.g., as realized in ferromagnetic graphene). We find that the entanglement between spin and pseudospin…

介观与纳米尺度物理 · 物理学 2018-09-21 Manuel Offidani , Aires Ferreira

Valley polarization and altermagnetism are two emerging fundamental phenomena in condensed matter physics, offering unprecedented opportunites for information encoding and processing in novel energy-efficient devices. By coupling valley and…

材料科学 · 物理学 2025-08-12 Wen-Xin Jiang , Zhen-Hao Gong , Yuantao Chen , Zhigang Gui , Li Huang

Searching for exotic transport properties in new topological state of matters is an active topic. One of the most fascinating achievements is the chiral anomaly in recently discovered Weyl semimetals (WSMs), which is manifested as a…

介观与纳米尺度物理 · 物理学 2018-10-17 Min Wu , Guolin Zheng , Weiwei Chu , Wenshuai Gao , Hongwei Zhang , Jianwei Lu , Yuyan Han , Jiyong Yang , Haifeng Du , Wei Ning , Yuheng Zhang , Mingliang Tian

The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspect in condensed matter physics and has been controversial for a long time. Recent studies indicate that the intrinsic AHE is closely related…

强关联电子 · 物理学 2018-09-13 Qi Wang , Yuanfeng Xu , Rui Lou , Zhonghao Liu , Man Li , Yaobo Huang , Dawei Shen , Hongming Weng , Shancai Wang , Hechang Lei

Strain is an effective method to tune the electronic properties of two-dimension (2D) materials, and can induce novel phase transition. Recently, 2D $\mathrm{MA_2Z_4}$ family materials are of interest because of their emerging topological,…

材料科学 · 物理学 2022-08-31 San-Dong Guo , Wen-Qi Mu , Jia-Hao Wang , Yu-Xuan Yang , Bing Wang , Yee-Sin Ang

The electronic, magnetic, and topological properties of CoBr2 monolayer are studied in the frame-work of the density-functional theory (DFT) combined with tight-binding (TB) modeling in terms of Wannier basis. Our DFT investigation and…

材料科学 · 物理学 2017-07-27 Peng Chen , Jin-Yu Zou , Bang-Gui Liu

Stable and remarkable valley polarization effect is the key to utilizing valley degree of freedom in valleytronic devices. According to first-principles calculations and symmetry analysis, we reveal that valley polarization effect in…

材料科学 · 物理学 2026-03-23 Weifeng Xie , Libo Wang , Xiong Xu , Yunliang Yue , Huayan Xia , Longhui He , Hui Wang