相关论文: Probing switchable valley-related Hall effects in …
An anomalous Hall effect and rectification of a Hall voltage are observed by applying a radio-frequency (rf) current through a single-layered ferromagnetic wire located on a coplanar waveguide. The components of the magnetization…
We study theoretically the zero temperature intrinsic anomalous Hall effect in an experimentally realized 2D spin-orbit coupled Bose gas. For anisotropic atomic interactions and as the spin-orbit coupling strength increases, the system…
Quantum materials have exhibited attractive electro-mechanical responses, but their piezoelectric coefficients are far from satisfactory due to the lack of fundamental mechanisms to benefit from the quantum effects. We discovered the valley…
We predict two topological phase transitions for cadmium arsenide (\ce{Cd3As2}) thin films under in-plane magnetic field, taking advantage of a four-band $k\cdot p$ model and effective $g$ factors calculated from first principles. Film…
Recently Chern insulators with Chern number $C=1$ and $C=2$ in zero (or very small) magnetic field have been observed in two moire graphene systems: twisted bilayer graphene and ABC trilayer graphene, both aligned with a hexagonal…
Van der Waals (vdW) heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in non-magnetic TMDs.…
We experimentally investigate a non-linear Hall effect for three-dimensional WTe$_2$ and Cd$_3$As$_2$ single crystals, representing Weyl and Dirac semimetals, respectively. We observe finite second-harmonic Hall voltage, which depends…
Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent…
The extensive research of two-dimensional layered materials has revealed that valleys, as energy extrema in momentum space, could offer a new degree of freedom for carrying information. Based on this concept, researchers have predicted…
We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…
We introduce a novel platform for realizing interaction-induced Hall crystals with diverse Chern numbers $C$. This platform consists of a two-dimensional semiconductor or graphene subjected to an out-of-plane magnetic field and a…
We identify a sizable non-linear anomalous Hall effect in the electrical response of spin-3/2 heavy holes in zincblende semiconductor nanostructures. The response is driven by a quadrupole interaction with the electric field enabled by…
The quantum anomalous Hall effect is a intriguing quantum state which exhibits the chiral edge states in the absence of magnetic field. While the search for quantum anomalous Hall insulators is still active, the researchers mainly search…
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE…
Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have…
Altermagnets (AMs) and fully compensated ferrimagnets (FC-FIMs) are emerging classes of magnetic materials that combine the advantages of antiferromagnets and ferromagnets. Here, we elucidate the mechanism behind the uniaxial strain-driven…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
Electrons in certain two-dimensional crystals possess a pseudospin degree of freedom associated with the existence of two inequivalent valleys in the Brillouin zone. If, as in monolayer MoS2, inversion symmetry is broken and time-reversal…
Valleytronics aims to control electrons in a valley-specific manner for quantum information manipulation. Due to their strong in-plane anisotropy, which enables polarization-controlled optical transitions to distinct nondegenerate valleys,…
Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…