相关论文: Probing switchable valley-related Hall effects in …
Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles…
Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…
Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr$_2$COOH MXene is a promising…
2D ferrovalley materials that exhibit spontaneous valley polarization are both fundamentally intriguing and practically appealing to be used in valleytronic devices. Usually, the research on 2D ferrovalley materials is mainly focused on…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model…
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to enable innovative spintronic devices. However, the rare…
Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) YX$_2$(X= I, Br,and Cl) in 2H structure constitute a series…
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA)…
Exploiting the valley degree of freedom introduces a novel paradigm for advancing quantum information technology. Currently, the investigation on spontaneous valley polarization mainly focuses on two major types of systems. One type…
Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
Valley Hall effect is fundamental to valleytronics and provides a promising avenue for advancing information technology. While conventional valley Hall effect requires the inversion symmetry breaking, the recently proposed nonlinear valley…
Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT)…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose…