We present a unified theory of charge carrier transport in 2D Dirac systems with broken mirror inversion and time-reversal symmetries (e.g., as realized in ferromagnetic graphene). We find that the entanglement between spin and pseudospin SU(2) degrees of freedom stemming from spin-orbit effects leads to a distinctive gate voltage dependence (change of sign) of the anomalous Hall conductivity approaching the topological gap, which remains robust against impurity scattering and thus is a smoking gun for magnetized 2D Dirac fermions. Furthermore, we unveil a robust skew scattering mechanism, modulated by the spin texture of the energy bands, which causes a net spin accumulation at the sample boundaries even for spin-transparent disorder. The newly unveiled extrinsic spin Hall effect is readily tunable by a gate voltage and opens novel opportunities for the control of spin currents in 2D ferromagnetic materials.
@article{arxiv.1801.07713,
title = {Anomalous Hall effect in 2D Dirac materials},
author = {Manuel Offidani and Aires Ferreira},
journal= {arXiv preprint arXiv:1801.07713},
year = {2018}
}
Comments
5 pages, 3 figures + supplemental material (16 pages, 9 figures). Title and references updated