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The concept of valleytronics has recently gained considerable research attention due to its intriguing physical phenomena and practical applications in optoelectronics and quantum information. In this study, by employing GW-BSE calculations…

材料科学 · 物理学 2024-01-22 Vo Khuong Dien , Pham Thi Bich Thao , Nguyen Thi Han , Nguyen Thanh Tien

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired…

介观与纳米尺度物理 · 物理学 2013-04-17 Hualing Zeng , Gui-Bin Liu , Junfeng Dai , Yajun Yan , Bairen Zhu , Ruicong He , Lu Xie , Shijie Xu , Xianhui Chen , Wang Yao , Xiaodong Cui

For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new…

材料科学 · 物理学 2021-01-27 Chen Yang , Zhigang Song , Xiaotian Sun , Jing Lu

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…

介观与纳米尺度物理 · 物理学 2012-05-09 Di Xiao , Gui-Bin Liu , Wanxiang Feng , Xiaodong Xu , Wang Yao

To date, a number of valley materials have been discovered with the spin-valley or valley-layer couplings. It is highly desirable to realize the interplay of more electronic degrees of freedom in a valley material. Based on the…

材料科学 · 物理学 2023-05-24 Xiaohui Wang , Li Liang , Xiao Li

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

Valleytronics aims to control electrons in a valley-specific manner for quantum information manipulation. Due to their strong in-plane anisotropy, which enables polarization-controlled optical transitions to distinct nondegenerate valleys,…

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and…

Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to…

介观与纳米尺度物理 · 物理学 2017-07-21 Guohua Wei , David A. Czaplewski , Erik J. Lenferink , Teodor K. Stanev , Il Woong Jung , Nathaniel P. Stern

Altermagnets represent a newly identified third class of collinear magnets and have recently emerged as a focal point in condensed matter physics. In this work, through first-principles calculations and theoretical analysis, we identify…

材料科学 · 物理学 2025-12-15 An-Dong Fan , Yong-Kun Wang , Jin-Yang Li , Si Li

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for…

We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion…

材料科学 · 物理学 2014-01-01 K. Kośmider , J. W. González , J. Fernández-Rossier

Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum phenomena and potential application in information…

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

介观与纳米尺度物理 · 物理学 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis

We theoretically study the ultrafast optical control of multiple valley states in two-dimensional (2D) tin sulfide (SnS) monolayers, a member of the layered group-IV monochalcogenides, which is a promising class of materials for overcoming…

A class of septuple-atomic-layer two-dimensional (2D) materials, MA$_2$Z$_4$, is sought as an alternative to 2D hexagonal transition metal dichalcogenides in the field of valleytronics and spintronics. In these materials, the structural…

材料科学 · 物理学 2023-06-27 Sajjan Sheoran , Ankita Phutela , Ruman Moullik , Saswata Bhattacharya

Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…

介观与纳米尺度物理 · 物理学 2018-08-27 Tong Zhou , Jiayong Zhang , Hua Jiang , Igor Zutic , Zhongqin Yang

In the field of photocatalytic water splitting, no current studies have explicitly investigated the coexistence of multiple band-edge alignments in two-dimensional (2D) materials with intrinsic electric fields. In this Letter, we designed…

材料科学 · 物理学 2024-09-17 Zhi-Qiang Wen , Qiu Yang , Shu-Hao Cao , Zhao-Yi Zeng , Hua-Yun Geng , Xiang-Rong Chen
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