相关论文: Single Micro-hole per Pixel for Thin Ge-on-Si Imag…

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

We study the nano- and micro-structures that increase the optical efficiency of the CMOS image pixels in visible and infrared. We consider the difference between the micro-holes at the pixels' bottom and the top and the holes that are…

Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…

Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the…

We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum…

We demonstrate a conceptually new mechanism for sub-wavelength focusing at optical frequencies based upon the use of nano-hole quasi-periodic arrays in metal screens. Using coherent illumination at 660 nm and scanning near-field optical…

CMOS detectors offer many advantages over CCDs for optical and UV astronomical applications, especially in space where high radiation tolerance is required. However, astronomical instruments are most often designed for low light-level…

In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…

Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Emerging applications in biomedical and communication fields…

We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated…

We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…

Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…

Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…

This work presents a new super-resolution imaging approach by using subwavelength hole resonances. We employ a subwavelength structure in which an array of tiny holes are etched in a metallic slab with the neighboring distance $\ell$ that…

Sensitive and cost-effective Group-IV short-wave infrared (SWIR) photodetectors (PDs), compatible with complementary metal-oxide semiconductor (CMOS) processes, are crucial for various emerging applications. Here, we developed a black GeSn…

Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…

Nano-electro-opto-mechanical systems enable the synergistic coexistence of electrical, mechanical, and optical signals on a chip to realize new functions. Most of the technology platforms proposed for the fabrication of these systems so far…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…