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We develop a minimal theory for the recently observed metal-insulator transition (MIT) in two-dimensional (2D) moir\'e multilayer transition metal dichalcogenides (mTMD) using Coulomb disorder in the environment as the underlying mechanism.…

介观与纳米尺度物理 · 物理学 2022-04-25 Seongjin Ahn , Sankar Das Sarma

Controlling the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for tailoring their optical and electronic properties. While phase transitions in monolayer TMDs and semiconductor-to-metal…

We theoretically consider two-dimensional moir\'e transition metal dichalcogenide (TMD) bilayers, which are strongly correlated in the sense that the on-site Coulomb interaction is comparable to or larger than the hopping kinetic energy…

强关联电子 · 物理学 2022-01-20 Haining Pan , Sankar Das Sarma

Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical and chemical properties. One promising strategy to tailor TMD properties of TMDs is to create alloys through dopant-induced…

材料科学 · 物理学 2023-05-24 Mengqi Fang , Eui-Hyeok Yang

Two-dimensional transition metal dichalcogenides (TMDs) usually exist in two or more structural phases with different physical properties, and can be repeatedly switched between these phases via different stimuli, making them potentially…

材料科学 · 物理学 2020-04-29 Priyanka Manchanda , Pankaj Kumar , Pratibha Dev

Transition metal dichalcogenides (TMDs) are a branch of two-dimensional materials which in addition to having an easy-to-exfoliate layered structure, also host semiconducting, metallic, superconducting, and topological properties in various…

超导电性 · 物理学 2023-01-25 Suvodeep Paul , Saswata Talukdar , Ravi Shankar Singh , Surajit Saha

We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…

强关联电子 · 物理学 2017-03-15 K. J. Kapcia , S. Robaszkiewicz , M. Capone , A. Amaricci

A comprehensive study of the electronic and structural phase transition from 1T` to Td in the bulk Weyl semimetal Mo1-xWxTe2 at different doping concentrations has been carried out using time-of-flight momentum microscopy (including…

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We show numerically that the nature of the doping induced metal-insulator transition in the two-dimensional Hubbard model is radically altered by the inclusion of a term, $W$, which depends upon a square of a single-particle…

强关联电子 · 物理学 2009-10-30 F. F. Assaad , M. Imada

In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…

强关联电子 · 物理学 2022-07-04 Yuting Tan , Vladimir Dobrosavljevic , Louk Rademaker

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

We study the dimensional dependence of the interplay between correlation and disorder in two dimension at half filling using 2D $t-t'$ disordered Hubbard model with deterministic disorder both at zero and finite temperatures. Inclusion of…

强关联电子 · 物理学 2015-05-13 Tribikram Gupta , Sanjay Gupta

Employing Nernst-Einstein decomposition $\sigma=e^2\chi_c D$ of the conductivity $\sigma$ onto charge susceptibility (compressibility) $\chi_c$ and diffusion constant $D$, we argue that the bad-metallic behavior of $\sigma$ in the regime of…

强关联电子 · 物理学 2017-02-01 Jure Kokalj

In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…

Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe$_2$ monolayers [J. Pack, et al.,…

介观与纳米尺度物理 · 物理学 2024-06-28 Yi Huang , Sankar Das Sarma

Layered doped Mott insulators, such as the cuprates, show unusual temperature dependence of the resistivity. Intriguingly, the resistivity perpendicular to the CuO$_2$ planes, $\rho_c(T)$, shows both metallic ($d\rho_c/dT > 0$) and…

强关联电子 · 物理学 2013-01-11 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

Moir\'{e} superlattices in transition metal dichalcogenides (TMDs) heterobilayers exhibit various correlated insulating states driven by long-range Coulomb interactions, and these states crucially alter exciton resonances, particularly at…

材料科学 · 物理学 2025-11-04 Junghwan Kim , Dinh Van Tuan , Hanan Dery

Transition metal dichalcogenide (TMD) bilayers have recently emerged as a robust and tunable moir\'e system for studying and designing correlated electron physics. In this work, by combining large-scale first principle calculation and…

强关联电子 · 物理学 2020-12-30 Yang Zhang , Noah F. Q. Yuan , Liang Fu

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg
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