相关论文: Geometric interference in a high-mobility graphene…
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance-…
We predict a novel quantum interference based on the negative refraction across a semiconductor P-N junction: with a local pump on one side of the junction, the response of a local probe on the other side behaves as if the disturbance…
Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
We have investigated transport through graphene Andreev interferometers exhibiting reentrance of the superconducting proximity effect. We observed a crossover in the Andreev conductance oscillations as a function of gate voltage ($V_{BG}$).…
We study Fabry-Perot interference in hybrid devices, each consisting of a mesoscopic superconducting disk deposited on the surface of a three-dimensional topological insulator. Such structures are hypothesized to contain protected zero…
We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the…
We investigate supercurrent interference patterns measured as a function of magnetic field in ballistic graphene Josephson junctions. At high doping, the expected $\Phi_{0}$-periodic "Fraunhofer" pattern is observed, indicating a uniform…
The electronic conductance of graphene-based bilayer flake systems reveal different quantum interference effects, such as Fabry-P\'erot resonances and sharp Fano antiresonances on account of competing electronic paths through the device.…
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…
This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…
The coherence of quantum Hall (QH) edges play the deciding factor in demonstrating an electron interferometer, which has potential to realize a topological qubit. A Graphene p-n junction (PNJ) with co-propagating spin and valley polarized…
A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor interface. Quite generally, the Schottky-Mott…
We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass…
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…
The chapter combines analytical (statistical-thermodynamic and kinetic) with numerical (Kubo-Greenwood-formalism-based) approaches used to ascertain an influence of the configurations of point (impurities, vacancies) and line (grain…
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…
We consider quantum point contacts (QPCs) defined within disordered two-dimensional electron gases as studied by scanning gate microscopy. We evaluate the conductance maps in the Landauer approach and wave function picture of electron…
We simulate a hybrid superconductor-graphene device in the quantum Hall regime to identify the origin of downstream resistance oscillations in a recent experiment [Zhao et. al. Nature Physics 16, (2020)]. In addition to the previously…