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We theoretically study a current switch that exploits the phase acquired by a charge carrier as it tunnels through a potential barrier in graphene. The system acts as an interferometer based on an armchair graphene quantum ring, where the…

介观与纳米尺度物理 · 物理学 2017-02-03 D. J. P. de Sousa , Andrey Chaves , J. M. Pereira , G. A. Farias

We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates…

介观与纳米尺度物理 · 物理学 2013-12-05 S. P. Milovanovic , M. Ramezani Masir , F. M. Peeters

A theoretical model is proposed to describe asymmetric gate-voltage dependence of conductance and noise in two-terminal ballistic graphene devices. The model is analyzed independently within the self-consistent Hartree and Thomas-Fermi…

介观与纳米尺度物理 · 物理学 2011-07-08 W. -R. Hannes , M. Jonson , M. Titov

The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the…

We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance…

介观与纳米尺度物理 · 物理学 2017-03-21 G. Yu. Vasileva , D. Smirnov , Yu. B. Vasilyev , M. O. Nestoklon , N. S. Averkiev , S. Novikov , I. I. Kaya , R. J. Haug

We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus…

介观与纳米尺度物理 · 物理学 2011-03-22 C. E. Malec , D. Davidovic

We investigate electronic transport through a graphene $n$-$p$ junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the $n$-doped and $p$-doped regions are fixed to 2 and -2…

介观与纳米尺度物理 · 物理学 2018-07-30 Qianfan Ma , François D. Parmentier , Preden Roulleau , Geneviève Fleury

A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p…

介观与纳米尺度物理 · 物理学 2015-05-13 T. Mueller , F. Xia , M. Freitag , J. Tsang , Ph. Avouris

Recent quantum Hall experiments conducted on disordered graphene pn junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums' resistances. However in the ballistic limit, theory…

介观与纳米尺度物理 · 物理学 2009-11-26 Tony Low

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

介观与纳米尺度物理 · 物理学 2007-06-19 B. Huard , J. A. Sulpizio , N. Stander , K. Todd , B. Yang , D. Goldhaber-Gordon

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case…

Snake states and Aharonov-Bohm interferences are examples of magnetoconductance oscillations that can be observed in a graphene p-n junction. Even though they have already been reported in suspended and encapsulated devices including…

Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions…

介观与纳米尺度物理 · 物理学 2017-10-12 Chi Tang , Bin Cheng , Mohammed Aldosary , Zhiyong Wang , Zilong Jiang , K. Watanabe , T. Taniguchi , Marc Bockrath , Jing Shi

We report a numerical study on Aharonov-Bohm (AB) effect and parity selective tunneling in pn junctions based on zigzag graphene nanoribbon rings. We find that when applying a magnetic field to the ring, the AB interference can reverse the…

介观与纳米尺度物理 · 物理学 2014-05-02 Viet-Hung Nguyen , Yann-Michel Niquet , Philippe Dollfus

We experimentally investigate interference effects in transport across a single incompressible strip at the edge of the quantum Hall system by using a Fabry-Perot type interferometer. We find the interference oscillations in transport…

介观与纳米尺度物理 · 物理学 2009-11-13 E. V. Deviatov , B. Marquardt , A. Lorke , G. Biasiol , L. Sorba

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The…

介观与纳米尺度物理 · 物理学 2017-06-15 Sameer Grover , Anupama Joshi , Ashwin Tulapurkar , Mandar M. Deshmukh

Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of…

Quantum interferometers are powerful tools for probing the wave-nature and exchange statistics of indistinguishable particles. Of particular interest are interferometers formed by the chiral, one-dimensional (1D) edge channels of the…

Knowledge of the topology of the electronic ground state of materials has led to deep insights to novel phenomena such as the integer quantum Hall effect and fermion-number fractionalization, as well as other properties of matter. Joining…

介观与纳米尺度物理 · 物理学 2017-08-18 Ting Cao , Fangzhou Zhao , Steven G. Louie

The conductance of breaking metallic nanojunctions shows plateaus alternated with sudden jumps, corresponding to the stretching of stable atomic configurations and atomic rearrangements, respectively. We investigate the structure of the…

介观与纳米尺度物理 · 物理学 2007-05-23 A. Halbritter , Sz. Csonka , G. Mihály , O. I. Shklyarevskii , S. Speller , H. van Kempen