相关论文: The gate tunable 2D pn junction driven out-of-equi…
The pn junction is a fundamental electrical component in modern electronics and optoelectronics. Currently, there is a great deal of interest in the two-dimensional (2D) pn junction. Although many experiments have demonstrated the working…
The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson…
Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively…
We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction…
We investigate the tunability of electrostatic coupling between solid state quantum dots as building blocks for quantum bits. Specifically, our analysis is based upon two-dimensional electron systems (2DEG) and depletion by top gates. We…
We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…
We investigate the thermoelectric performance of 2D nanojunctions with gate tunable architectures and varying channel lengths from 3 to 12 nm using a combination of first principles simulations, including density functional theory, DFT with…
We investigate the controllability of quantum electrons trapped in a two-dimensional device, typically a MOS field-effect transistor. The problem is modeled by the Schr\"odinger equation in a bounded domain coupled to the Poisson equation…
The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic…
Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with…
In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D electrical and geometrical confinements of carrier charge…
The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…
We study the curvature-induced bound states and the coherent transport properties for a particle constrained to move on a truncated cone-like surface. With longitudinal hard wall boundary condition, the probability densities and spectra…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is…
We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…