相关论文: The gate tunable 2D pn junction driven out-of-equi…

In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D…

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…

We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to…

Recent experiments have shown that transport properties of molecular-scale devices can be reversibly altered by the surrounding solvent. Here, we use a combination of first-principles calculations and experiment to explain this change in…

We introduce a variation of the dissipative particle dynamics (DPD) thermostat that allows for controlling transport properties of molecular fluids. The standard DPD thermostat acts only on a relative velocity along the interatomic axis.…

Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…

Cross-field electron transport in Hall thrusters is widely attributed to high-frequency $E\times B$ instabilities, yet its net spatial pathway remains poorly resolved. Here we perform instability-resolving three-dimensional particle-in-cell…

We study numerically cross conductances in a four-terminal all-graphene setup. We show that far away from the Dirac point current flows along zigzag directions, giving the possibility to guide the current between terminals using a tunable…

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

Electric-field-controlled charge transport is a key concept of modern computers, embodied namely in field effect transistors. The metallic gate voltage controls charge population, thus it is possible to define logical elements which are the…

We investigate the interface coupling between the 2D sine-Gordon equation and the 2D wave equation in the context of a Josephson window junction using a finite volume numerical method and soliton perturbation theory. The geometry of the…

We develop a simulation framework for electrostatic and transport modeling of 2D Topological insulator field-effect transistor (2D TIFETs), based solely on first-principles calculations using density functional theory (DFT). We find that…

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…

Within a phonon-assisted resonance level model we develop a self-consistent procedure for calculating electron transport currents in molecular junctions with intermediate to strong electron-phonon interaction. The scheme takes into account…

Time-dependent perturbations can drive a trivial two-dimensional band insulator into a quantum Hall-like phase, with protected nonequilibrium states bound to its edges. We propose an experiment to probe the existence of these topological…

The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…

A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the…

In this review, we discuss the impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials. We review recent progress in understanding electronic transport in two-dimensional (2D) materials…

The approach applicable for spatially inhomogeneous and time-dependent problems associated with the induced superconductivity in low dimensional electronic systems is developed. This approach is based on the Fano--Anderson model which…

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…