相关论文: The gate tunable 2D pn junction driven out-of-equi…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
Unique properties of a ballistic DND or grain boundary D-D junction, including doubly degenerate ground state with tunable potential barrier between the "up" and "down" states and non-quantized spontaneous magnetic flux, make it a good…
The Quantum Spin Hall insulator is characterized by the presence of gapless helical edge states where the spin of the charge carriers is locked to their direction of motion. In order to probe the properties of the edge modes, we propose a…
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for…
A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is…
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up…
The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is…
Two-qubit quantum gates play an essential role in quantum computing, whose operation critically depends on the entanglement between two qubits. Resonantly driven controlled-NOT (CNOT) gates based on silicon double quantum dots (DQDs) are…
Electrical transport in three dimensional topological insulators(TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into…
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able…
Particle transport, acceleration and energisation are phenomena of major importance for both space and laboratory plasmas. Despite years of study, an accurate theoretical description of these effects is still lacking. Validating models with…
Designing tunneling junctions with abrupt on-off characteristics and high current densities is critical for many different devices including backward diodes and tunneling field effect transistors (TFETs). It is possible to get a sharp, high…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…
We report on the transition from magnetic edge to electric edge transport in a split magnetic gate device which applies a notch magnetic field to a two-dimensional electron gas. The gate bias allows tuning the overlap of magnetic and…
Strongly interacting spins underlie many intriguing phenomena and applications ranging from magnetism to quantum information processing. Interacting spins combined with motion display exotic spin transport phenomena, such as superfluidity…
We consider a planar two-dimensional system between two media with different dielectric constants and in the presence of a third dielectric medium separated by a nonplanar interface. Extending a perturbative method for solving Poisson's…
An integrated piecewise thermal equilibrium approach based on the first-principles calculation method has been developed to calculate bias dependent electronic structures and current- and differential conductance-voltage characteristics of…
Gate-controllable two dimensional systems with in-plane modulation of properties could serve as highly tunable effective media. Intuitively, such systems may bring novel functionality provided that the period of the lateral modulation is…
We have developed efficient numerical algorithms for solving 3D steady-state Poisson-Nernst-Planck (PNP) equations with excess chemical potentials described by the classical density functional theory (cDFT). The coupled PNP equations are…
We study spin transport in normal/ferromagnetic/normal graphene junctions where a gate electrode is attached to the ferromagnetic graphene. We find that due to the exchange field of the ferromagnetic graphene, spin current through the…