相关论文: A double quantum dot defined by top gates in a sin…
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy. Low-temperature electrical measurements of InSb nanocross…
We report on low temperature measurements in a fully tunable carbon nanotube double quantum dot. A new fabrication technique has been used for the top-gates in order to avoid covering the whole nanotube with an oxide layer as in previous…
We studied the dynamics of a pair of single-electron double quantum dots (DQD) under longitudinal and transverse static magnetic fields and time-dependent harmonic modulation of their interaction couplings. We propose to modulate the tunnel…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We present a theoretical and experimental study of photonic and electronic transport properties of a voltage biased InAs semiconductor double quantum dot (DQD) that is dipole-coupled to a superconducting transmission line resonator. We…
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information…
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the…
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research…
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot,…
The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create…