相关论文: A double quantum dot defined by top gates in a sin…

We present a novel semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown InAsSb surface quantum well with an in-situ deposited Nb top layer. Relative to conventional Al-InAs based systems, the InAsSb…

We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper…

Robust quantum computation with d-level quantum systems (qudits) poses two requirements: fast, parallel quantum gates and high fidelity two-qudit gates. We first describe how to implement parallel single qudit operations. It is by now well…

In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation.…

We consider a double-quantum-dot (DQD) qubit which contains six electrons instead of the usual one or two. In this spin qubit, quantum information is encoded in a low-lying singlet-triplet space much as in the case of a two-electron DQD…

Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density.…

Distributed quantum computing (DQC) is crucial for high-volume quantum processing in the NISQ era. Many different technologies are utilized to implement a quantum computer, each with a different advantages and disadvantages. Various…

We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…

We present a simple technique which uses a self-aligned oxide etch to suspend individual single-wall carbon nanotubes between metallic electrodes. This enables one to compare the properties of a particular nanotube before and after…

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to…

Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot…

Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach…

Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities…

We report electrical transport measurements through a semiconducting single-walled carbon nanotube (SWNT) with three additional top-gates. At low temperatures the system acts as a double quantum dot with large inter-dot tunnel coupling…

We proposed an experimentally feasible scheme of nano-plamonic switch and quantum router via the single self-assembled InGaAs/GaAs semiconductor quantum dot (SQD) with a V type three-level energy structure located between two silver…

We study thermoelectric transport through a serial double quantum dot (DQD) coupled to two metallic leads with different thermal energies. We take into account the electron sequential and cotunneling effects via different master equation…

Epitaxial InAs/GaAs Quantum Dots (QDs) are widely used as highly efficient and pure sources of single photons and entangled photon-pairs, however reliable wafer-scale growth techniques have proved elusive. Growth of two-dimensional Quantum…

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…

Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present…