相关论文: A double quantum dot defined by top gates in a sin…
We propose a scheme with dc-control of finite bandwidth to implement two-qubit gate for superconducting flux qubits at the optimal point. We provide a detailed non-perturbative analysis on the dynamic evolution of the qubits interacting…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
We investigate magneto-transport through a 1.6 \mu m wide quantum dot (QD) with adjacent charge detector, for different integer filling factors in the QD and constrictions. When this system is operated as a Fabry-P\'erot interferometer,…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
We theoretically study single and two-qubit dynamics in the circuit QED architecture. We focus on the current experimental design [Wallraff et al., Nature 431, 162 (2004); Schuster et al., Nature 445, 515 (2007)] in which superconducting…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances…
Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum…
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The…
We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…
We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux.…
We present here a theory and a computational tool, Silicon-{\sc Qnano}, to describe atomic scale quantum dots in Silicon. The methodology is applied to model dangling bond quantum dots (DBQDs) created on a passivated H:Si-(100)-(2$\times$1)…
One-dimensional (1D) electronic transport and induced superconductivity in semiconductor nano-structures are crucial ingredients to realize topological superconductivity. Our approach for topological superconductivity employs a…
We study a vertical double quantum dot (DQD) in a Si/Si$_{1-x}$Ge$_x$/Si double-well heterostructure for full electrical control of electron Loss-DiVincenzo (LD) spin qubits, using realistic device modeling and numerical simulations. Due to…
Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including…
We present an analytically tractable theory of reservoir-engineered refrigeration of a superconducting microwave cavity and map it onto a realistic solid-state implementation based on gate-defined double-quantum-dot (DQD) spin qubits.…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…