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A top-gated single wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements…

介观与纳米尺度物理 · 物理学 2008-04-23 K. Grove-Rasmussen , H. I. Jørgensen , T. Hayashi , P. E. Lindelof , T. Fujisawa

We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD). Our model describes a DQD formed in semiconductor nanowire with longitudinal potential modulated by local…

We report the realization of nanotube-based quantum dot structures that use local electrostatic gating to produce individually controllable dots in series along a nanotube. Electrostatic top-gates produce depletion regions in the underlying…

介观与纳米尺度物理 · 物理学 2015-06-25 M. J. Biercuk , S. Garaj , N. Mason , J. M. Chow , C. M. Marcus

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

介观与纳米尺度物理 · 物理学 2020-04-22 Luca Banszerus , Samuel Möller , Eike Icking , Kenji Watanabe , Takashi Taniguchi , Christian Volk , Christoph Stampfer

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and…

材料科学 · 物理学 2020-01-29 Maksym V. Strikha , Anatolii I. Kurchak , Anna N. Morozovska

Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose…

The transport properties of quantum dot (QD) systems based on double-walled carbon nanotube (DWCNT) are investigated. The interplay between microscopic structure and strong Coulomb interaction is treated within a bosonization framework. The…

介观与纳米尺度物理 · 物理学 2009-11-13 Shidong Wang , Milena Grifoni

We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is…

介观与纳米尺度物理 · 物理学 2020-10-08 Furong Fan , Yuanjie Chen , Dong Pan , Jianhua Zhao , H. Q. Xu

We study spin transport in the one- and two-electron regimes of parallel-coupled double quantum dots (DQDs). The DQDs are formed in InAs nanowires by a combination of crystal-phase engineering and electrostatic gating, with an interdot…

介观与纳米尺度物理 · 物理学 2019-02-28 Malin Nilsson , Florinda Viñas Boström , Sebastian Lehmann , Kimberly A. Dick , Martin Leijnse , Claes Thelander

We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…

介观与纳米尺度物理 · 物理学 2015-05-20 L. J. Wang , H. O. Li , Z. Su , T. Tu , G. Cao , C. Zhou , X. J. Hao , G. C. Guo , G. P. Guo

An artifcial two-atomic molecule, also called a double quantum dot (DQD), is an ideal system for exploring few electron physics. Spin-entanglement between just two electrons can be explored in such systems where singlet and triplet states…

介观与纳米尺度物理 · 物理学 2008-12-22 H. Ingerslev Jørgensen , K. Grove-Rasmussen , K. -Y. Wang , A. M. Blackburn , K. Flensberg , P. E. Lindelof , D. A. Williams

A quantum dot (QD) system provides various quantum physics of nanostructures. So far, many types of semiconductor QD structures have been fabricated and investigated experimentally and analyzed theoretically. Presently, QD systems have…

介观与纳米尺度物理 · 物理学 2022-09-05 Tetsufumi Tanamoto , Tomosuke Aono

Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene…

介观与纳米尺度物理 · 物理学 2014-06-18 Da Wei , Hai-Ou Li , Gang Cao , Gang Luo , Zhi-Xiong Zheng , Tao Tu , Ming Xiao , Guang-Can Guo , Hong-Wen Jiang , Guo-Ping Guo

We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb…

介观与纳米尺度物理 · 物理学 2007-05-23 V. S. Khrapai , S. Ludwig , J. P. Kotthaus , H. P. Tranitz , W. Wegscheider

We report an experimental study of a one-dimensional quintuple-quantum-dot array integrated with two quantum dot charge sensors in an InAs nanowire. The device is studied by measuring double quantum dots formed consecutively in the array…

介观与纳米尺度物理 · 物理学 2024-07-23 Yi Luo , Xiao-Fei Liu , Zhi-Hai Liu , Weijie Li , Shili Yan , Han Gao , Haitian Su , Dong Pan , Jianhua Zhao , Ji-Yin Wang , H. Q. Xu

High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb…

介观与纳米尺度物理 · 物理学 2021-11-05 Isha Verma , Sedighe Salimian , Valentina Zannier , Stefan Heun , Francesca Rossi , Daniele Ercolani , Fabio Beltram , Lucia Sorba

The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as bismuthene, provides a versatile platform for topological devices. We propose a topological quantum dot (QD) device in bismuthene ribbon in which two…

介观与纳米尺度物理 · 物理学 2019-05-22 Jiaojiao Zhou , Tong Zhou , Shu-guang Cheng , Hua Jiang , Zhongqin Yang

Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong…

介观与纳米尺度物理 · 物理学 2016-11-09 J. Stehlik , Y. -Y. Liu , C. Eichler , T. R. Hartke , X. Mi , M. J. Gullans , J. M. Taylor , J. R. Petta

We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…

Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…

介观与纳米尺度物理 · 物理学 2024-07-11 Alexander Ivlev , Hanifa Tidjani , Stefan Oosterhout , Amir Sammak , Giordano Scappucci , Menno Veldhorst