We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number of charge carriers on two gate-defined quantum dot independently between zero and five. The high tunability of the device meets requirements to make such a device a suitable building block for spin-qubits. In the single electron regime, we determine interdot tunnel rates on the order of 2~GHz. Both, the interdot tunnel coupling, as well as the capacitive interdot coupling increase with dot occupation, leading to the transition to a single quantum dot. Finite bias magneto-spectroscopy measurements allow to resolve the excited state spectra of the first electrons in the double quantum dot; being in agreement with spin and valley conserving interdot tunneling processes.
@article{arxiv.1912.11373,
title = {Single-electron double quantum dots in bilayer graphene},
author = {Luca Banszerus and Samuel Möller and Eike Icking and Kenji Watanabe and Takashi Taniguchi and Christian Volk and Christoph Stampfer},
journal= {arXiv preprint arXiv:1912.11373},
year = {2020}
}