Quantum transport in double-gated graphene devices

J. Velasco; Y. Lee; L. Jing; G. Liu; W. Bao; C. N. Lau

doi:10.1016/j.ssc.2012.04.024

Quantum transport in double-gated graphene devices

Mesoscale and Nanoscale Physics 2015-06-05 v1

Authors: J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

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Abstract

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions with tunable polarity and charge densities, as well as a tunable band gap in bilayer graphene and a tunable band overlap in trilayer graphene. In high magnetic fields, the devices' conductance are quantized at integer and fractional values of conductance quantum, and the data are in good agreement with a model based on edge state equilibration at pn interfaces.

Keywords

graphene electronic transport graphene bilayers graphene transport and valleytronics

Cite

@article{arxiv.1207.5843,
  title  = {Quantum transport in double-gated graphene devices},
  author = {J. Velasco and Y. Lee and L. Jing and G. Liu and W. Bao and C. N. Lau},
  journal= {arXiv preprint arXiv:1207.5843},
  year   = {2015}
}

Quantum transport in double-gated graphene devices

Abstract

Keywords

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