Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.
@article{arxiv.1101.4383,
title = {Tuneable electronic properties in graphene},
author = {M. F. Craciun and S. Russo and M. Yamamoto and S. Tarucha},
journal= {arXiv preprint arXiv:1101.4383},
year = {2011}
}