Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidences for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nanoscale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.
@article{arxiv.1511.07631,
title = {Nano-scale strain engineering of graphene and graphene-based devices},
author = {N. -C. Yeh and C. -C. Hsu and M. L. Teague and J. -Q. Wang and D. A. Boyd and C. -C. Chen},
journal= {arXiv preprint arXiv:1511.07631},
year = {2016}
}
Comments
13 pages, 13 figures. Accepted for publication in Acta Mechanica Sinica (2015)