Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in constrictions, graphene nanoconstrictions can be a good platform for this technology. On the other hand, in the graphene nanoconstrictions, Fabry-Perot type quantum interference dominates the electrical conduction at low bias voltages. We argue that these two effects have different strain dependence; the pseudo-gauge field contribution is symmetric with respect to positive (tensile) and negative (compressive) strain, whereas the quantum interference is antisymmetric. As a result, a peculiar strain dependence of the conductance appears even at room temperatures.
@article{arxiv.2010.09192,
title = {Theory of the Strain Engineering of Graphene Nanoconstrictions},
author = {Masahiko Hayashi and Hideo Yoshioka and Hikari Tomori and Akinobu Kanda},
journal= {arXiv preprint arXiv:2010.09192},
year = {2021}
}