By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.
@article{arxiv.2009.03035,
title = {Global strain-induced scalar potential in graphene devices},
author = {Lujun Wang and Andreas Baumgartner and Péter Makk and Simon Zihlmann and Blesson S. Varghese and David I. Indolese and Kenji Watanabe and Takashi Taniguchi and Christian Schönenberger},
journal= {arXiv preprint arXiv:2009.03035},
year = {2021}
}