We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnetic fields as low as 500mT.
@article{arxiv.1112.2985,
title = {Electrical transport in suspended and double gated trilayer graphene},
author = {Thymofiy Khodkov and Freddie Withers and David Christopher Hudson and Monica Felicia Craciun and Saverio Russo},
journal= {arXiv preprint arXiv:1112.2985},
year = {2015}
}
Comments
to appear in Applied Physics Letters. Typos corrected and references updated