Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals − without taking part to their detachment from the growth catalyst − and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to ∼1.3×105 cm2V−1s−1 at ∼1011 cm−2 concentration. At cryogenic temperatures, the mobility (>6×105 cm2V−1s−1 at ∼1011 cm−2) is limited by the devices' physical edges, and charge fluctuations <7×109 cm−2 are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization (B∼50 mT) and signatures of electronic correlation, including the fractional quantum Hall effect.
@article{arxiv.2005.02284,
title = {High-quality electrical transport using scalable CVD graphene},
author = {Sergio Pezzini and Vaidotas Mišeikis and Simona Pace and Francesco Rossella and Kenji Watanabe and Takashi Taniguchi and Camilla Coletti},
journal= {arXiv preprint arXiv:2005.02284},
year = {2020}
}
Comments
This is the unedited authors' version of the submitted article; 24 pages, 4 figures and supplementary information